Dresden 2011 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
TT: Fachverband Tiefe Temperaturen
TT 50: SC: Tunneling, Josephson Junctions, SQUIDs 2
TT 50.3: Vortrag
Donnerstag, 17. März 2011, 14:30–14:45, HSZ 301
Systematic investigation of the current injection effect in Bi2Sr2CaCu2O8+δ — •S. Probst, X. Y. Jin, Y. Simsek, C. Steiner, and P. Müller — Department of Physics and Interdisciplinary Center for Molecular Materials (ICMM), Universität Erlangen-Nürnberg, Germany
By current injection we can change the properties of Bi2Sr2CaCu2O8+δ single crystals electronically in a wide range [1]. In order to investigate the doping process in greater detail, we have performed automated current injection experiments in very small bias current/voltage steps. By measuring the IV characteristics as well as doping current and doping voltage simultaneously, the change of superconducting properties is monitored. We were able to determine precisely the threshold-bias region where doping starts. We will discuss the observed phenomena and give an estimate for the depth of trap levels, which is crucial to understand the doping process.
[1] Y. Koval, X. Y. Jin, C. Bergmann, Y. Simsek, L. Ozyuzer, P. Müller, H. B. Wang, G. Behr, B. Büchner, Appl. Phys. Lett. 96, 082507 (2010).