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TT: Fachverband Tiefe Temperaturen
TT 53: Graphene (jointly with DY, DS, HL, MA, O)
TT 53.2: Vortrag
Donnerstag, 17. März 2011, 15:30–15:45, HSZ 401
Ballistic transport at room temperature in micrometer size multigraphene — •Srujana Dusari1, José Luis Barzola Quiquia1, Pablo Esquinazi1, and Nicolas Garcia2 — 1Division of Superconductivity and Magnetism, Universität Leipzig, Faculty of Physics and Earth Sciences, Institute for Experimental Physics II, Linnéstr. 5, 04103 Leipzig, Germany — 2Laboratorio de Física de Sistemas Pequeños y Nanotecnología, Consejo Superior de Investigaciones Científicas, Serrano 144, E-28006 Madrid, Spain
As an emergent material for electronic applications, graphite and graphene and their electrical transport properties have become a subject of intense focus. By performing transport measurements through micro and submicro constrictions in ~10 nm thick graphite samples, we observe drastic increase in the resistance decreasing the constriction width. Our experimental observations indicate that electrons behave ballistically even at room temperature and with mean free path of the order of microns. The values obtained for the mobility (~10^7 cm^2 v^-1 s^-1) and density of the electrons (~10^8 cm^-2) indicates that the graphene layers inside graphite are of higher quality than single ones. The decrease of magneto resistance with decreasing constriction width also indicates that the carrier mean free path is larger than few microns at room temperature.