Dresden 2011 – scientific programme
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TT: Fachverband Tiefe Temperaturen
TT 53: Graphene (jointly with DY, DS, HL, MA, O)
TT 53.3: Talk
Thursday, March 17, 2011, 15:45–16:00, HSZ 401
Long spin relaxation times in bilayer graphene — •Frank Volmer1,2, Tsung-Yeh Yang1,2, Jayakumar Balakrishnan3, Ahmet Avsar3, Manu Jaiswal3, Julia Samm1,2, Syed Rizwan Ali1,2, Alexandre Felix Pachoud3,4, Ming-Gang Zeng3,5, Mihaita Popinciuc1,2, Barbaros Özyilmaz3,4,5, Gernot Güntherodt1,2, and Bernd Beschoten1,2 — 1II. Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany — 2JARA: Fundamentals of Future Information Technology, 52074 Aachen, Germany — 3Department of Physics, National University of Singapore, 117542 Singapore — 4NUS Graduate School for Integrative Sciences and Engineering (NGS), Centre for Life Sciences (CeLS), 117456 Singapore — 5Nanocore, National University of Singapore, 117576 Singapore
The demonstration of micrometer long spin relaxation lengths in graphene at room temperature has made this material a promising candidate for spintronic applications. We investigated the spin transport in the non-local spin valve geometry in bilayer graphene using MgO barriers for spin injection. We demonstrate that the dominant spin relaxation mechanism in bilayer graphene is of the D'yakonov-Perel' type. In this case the spin dephasing time scales inversely with the charge carrier mobility. At room temperature spin dephasing times of up to 2 ns are measured in samples with the lowest mobility.
This work has been supported by DFG through FOR 912.