Dresden 2011 – scientific programme
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TT: Fachverband Tiefe Temperaturen
TT 54: SC: Heterostructures, Andreev Scattering, Proximity Effect
TT 54.4: Talk
Thursday, March 17, 2011, 16:15–16:30, HSZ 301
Andreev reflection with semiconductor-valence-band carriers — •David Futterer1, Michele Governale2, Ulrich Zülicke3, and Jürgen König1 — 1Theoretische Physik, Universität Duisburg Essen and CeNIDE, 47048 Duisburg, Germany — 2School of Chemical and Physical Sciences and MacDiarmid Institute for Advanced Materials and Nanotechnology, Victoria University of Wellington, PO Box 600, Wellington, New Zealand — 3Institute of Fundamental Sciences and MacDiarmid Institute for Advanced Materials and Nanotechnology, Massey University
We investigate Andreev reflections through a hybrid semiconductor/superconductor interface within the Bogoliubov-de Gennes formalism. In particular we focus on valence-band carriers of p-doped semiconductors with large spin-orbit coupling, approaching the junction under an arbitrary angle.
The spin-orbit coupling leads to a mixing between the energy bands. This allows four possibilities of reflection for an injected light-hole (heavy-hole) carrier. It can be normal reflected into the light-hole (heavy-hole) band or the heavy-hole (light-hole) band as well as Andreev reflected into each of the two bands. The reflection depends strongly on the angle of injection. Though Andreev reflection of heavy-hole carriers is in general possible, these carriers can only be normal reflected into the heavy-hole band in the case of perpendicular injection.