Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

T: Fachverband Teilchenphysik

T 63: Halbleiterdetektoren III

T 63.6: Vortrag

Mittwoch, 30. März 2011, 18:00–18:15, 30.21: 001

Diamond Pixel Detector Development and Estimation of its Radiation-Hardness — •Jieh-Wen Tsung, Fabian Hügging, and Norbert Wermes — Physikalisches Institut der Universität Bonn, Nussallee 12, 53115 Bonn

Diamond is an attractive sensor material for radiation detection, because its low capacitance and tiny leakage current after irradiation result in low noise. Its long radiation length and good thermal conductance also meet the demands of a vertex pixel detectors. The radiation-hardness of diamond, and its performance as a pixel detector after radiation damage is interesting for tracker developments. In this research, the chemical vapor deposition (CVD) diamonds are bump-bonded to the ATLAS pixel detector readout chip. These diamond pixel detectors are characterized, and their performance is compared to the current silicon pixel detector. Their accuracy performance is estimated using the Signal-to-Noise Ratio (SNR). The Signal-to-Noise Ratio (SNR) are modelled using analytical calculation and simulation, based on the architecture of ATLAS FE-I4 pixel electronics. Then the SNR are measured with a real pixel detector to validate the model. Finally, the SNR of diamond and silicon pixel detectors versus increasing irradiation are predicted using our model. The results are reported in this presentation.