Berlin 2012 – wissenschaftliches Programm
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BP: Fachverband Biologische Physik
BP 31: Imaging
BP 31.5: Vortrag
Freitag, 30. März 2012, 10:45–11:00, H 1058
Planar structured AlGaN/GaN High Electron Mobility Transistor sensor for recording of Physarum cell activity — •Hartmut Witte1, Thomas Lippelt1,2, Christian Warnke1,2, Marcus J. B. Hauser2, and Alois Krost1 — 1Otto-von-Guericke-Universität Magdeburg, Inst. Exp. Phys., Abt. Halbleiterepitaxie — 2Otto-von-Guericke-Universität Magdeburg, Inst. Exp. Phys., Abt. Biophysik
Planar multi-electrode AlGaN/GaN High Electron Mobility Transistors (HEMTs) arrangements are very useful for spatial and time resolved stimulation and recording of extended and excitable biological cultures such as neurons or yeast cells. In this contribution, the spatially resolved sensitivity of a multiple AlGaN/GaN HEMT structure is used for detection of migration and growth of Physarum cells in situ. Physarum polycephalum displays remarkably *intelligent* abilities inducing intensive studies for instance on learning and on memory of past events. We have investigated the impact of Physarum cell motion on the source-drain current and impedance of a sensor structure presented by ten circular arranged AlGaN/GaN HEMTs described in detail in Witte et al; J. Phys. D, 44, 355501 (2011). All time tracks were correlated with video pictures of the area around the actual HEMT and the Physarum cell. So, we detected the cell growing across a HEMT sensor. Based on the detailed analysis of the sensor/medium interface we are able to distinguish between the signals from the cell and the medium. Additionally, the cell dispersions were investigated by impedance spectroscopy for more information about the properties of inner structures.