Berlin 2012 –
wissenschaftliches Programm
DF 10: High- and low-k-dielectrics (jointly with DS)
Mittwoch, 28. März 2012, 09:30–11:30, EB 407
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09:30 |
DF 10.1 |
High dielectric constants due to charge order induced electrical heterogeneity — •Stephan Krohns, Pit Sippel, Holger Kirchhain, Stefan Riegg, Peter Lunkenheimer, Armin Reller, and Alois Loidl
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09:50 |
DF 10.2 |
Bilayer gate dielectric stacks of cerium oxide and titanium oxide for nanoelectronics — •Meng Meng Vanessa Chong, Kam Chew Leong, Pooi See Lee, and Iing Yoong Alfred Tok
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10:10 |
DF 10.3 |
High quality REO thin films from wet chemical deposition — •Maraike Ahlf, Meng Meng Vanessa Chong, Mathias Wickleder, Alfred Iing Yoong Tok, Pooi See Lee, and Katharina Al-Shamery
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10:30 |
DF 10.4 |
Epitaxial growth of Ba0.6Sr0.4TiO3 on highly conductive SrMoO3 thin films by Pulsed Laser Deposition — •Aldin Radetinac, Philipp Komissinskiy, and Lambert Alff
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10:50 |
DF 10.5 |
P-type conductivity in oxygen deficient HfO2−x thin films grown by Reactive Molecular Beam Epitaxy — •Erwin Hildebrandt, Jose Kurian, Mathis Müller, Thomas Schroeder, Hans-Joachim Kleebe, and Lambert Alff
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11:10 |
DF 10.6 |
Hydrogen Impurity in Y2O3: an Ab−Initio and a µSR perspective — •Estelina L. Silva, Apostolos Marinopoulos, Rui Vilão, and Ricardo Vieira
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