Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
DF: Fachverband Dielektrische Festkörper
DF 10: High- and low-k-dielectrics (jointly with DS)
DF 10.3: Vortrag
Mittwoch, 28. März 2012, 10:10–10:30, EB 407
High quality REO thin films from wet chemical deposition — •Maraike Ahlf1,2, Meng Meng Vanessa Chong2,3, Mathias Wickleder1, Alfred Iing Yoong Tok2, Pooi See Lee2, and Katharina Al-Shamery1 — 1University of Oldenburg, IRAC, Germany — 2Nanyang Technological University, MSE, Singapore, Singapore — 3Global Foundries Ltd., Singapore
The aggressive scaling in microelectronics leads to the need of new high performance thin film materials as gate oxides in MOS devices. High leakage currents suffered for conventionally used SiO2 when scaling down to sub 22 nm requires alternative high κ dielectrics. REOs are potential candidates to replace SiO2 due to their ecellent electrical properties. This necessitates the synthesis of new RE precursors and deposition methods to achieve impurity free films, since conventionally used techniques suffer from problems such as C impurities from the organic precursors used and formation of interfacial layers or byproducts due to high process temperatures. Results of an unconventional, low temperature, patented, wet chemical approach which is easy to realize and integrate into device production to deposit Nd2O3 ultra thin, high quality gate stacks will be presented. The constitution and annealing dependent crystallization behavior on Si and the deposition mechanism of inorganic designer RE-precursors has been investigated with XPS, XRD, AFM and HRTEM. CV and IV measurements show κ values as twice as high and leakage currents down to 10 orders of magnitude lower than conventionally SiO2. Various current conduction mechanisms can be understood from varying temperature measurements.