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DF: Fachverband Dielektrische Festkörper

DF 13: Poster II

DF 13.10: Poster

Mittwoch, 28. März 2012, 15:00–17:30, Poster E

Correlation between structural and ferroelectric properties of BaTiO₃ thin films — •Anja Herpers¹, Regina Dittmann¹, Daesung Park², Joachim Mayer², and Rainer Waser¹ — ¹Peter Grünberg Institut 7, Electronic Materials, Forschungszentrum Jülich GmbH, 52428 Jülich — ²Gemeinschaftslabor für Elektronenmikroskopie, RWTH Aachen University, Ahornstraße 55, 52074 Aachen

Point as well as extended defects in ferroelectric thin films are expected to have a strong influence on their ferroelectric properties. We investigated in detail the influence of growth conditions on the crystal structure of BaTiO₃ (BTO) thin films and its influence on the ferroelectric hysteresis loops and the leakage currents.

We performed detailed experiments to distinguish between the different types of defects by varying the pulsed laser deposition (PLD) parameters and the post annealing conditions. Furthermore, systematic studies of the influence of the growth kinetics on the oxygenation state of the thin films were performed and related to defect chemistry models. These investigations were complemented by high resolution transmission electron microscopy analysis of the atomic structure of the thin films and different types of electrode interfaces.

We succeeded to obtain closed hysteresis loops with a remanent polarization of 30µC/cm² for a 30nm thick BTO thin films stacked between SrRuO₃ and Pt electrodes.