Berlin 2012 – wissenschaftliches Programm

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DF: Fachverband Dielektrische Festkörper

DF 13: Poster II

DF 13.8: Poster

Mittwoch, 28. März 2012, 15:00–17:30, Poster E

Effect of high-frequency on etching of SiCOH films in CHF3 dual-frequency capacitively coupled plasmas — •Yijun Xu — II. Physikalisches Institut, Universität Göttingen, Friedrich- Hund- Platz 1, 37077 Göttingen, Germany — School of Physics Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, People's Republic of China

The effect of high-frequency (HF) frequency on etching characteristics of SiCOH films in a CHF3 dualfrequency capacitively couple plasma driven by 13.56 MHz/2 MHz, 27.12 MHz/2 MHz or 60 MHz/2 MHz sources was investigated in this work. The surface structure of the films after etching and the CHF3 discharge plasma were characterized. The increase of HF frequency reduced the critical HF power for the etching, suppressed the C:F deposition at the surface of etched films, and improved the etching of SiCOH films. The improvement of etching was attributed to the increase of ions energy and F concentration at high HF frequency.