Berlin 2012 – scientific programme

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DF: Fachverband Dielektrische Festkörper

DF 15: Dielectric and ferroelectric thin films

DF 15.5: Talk

Thursday, March 29, 2012, 11:15–11:35, EB 107

Changes in microstructural and opto-electric properties of CrN films induced by vanadium ion implantation — Mirjana Novakovic¹, Agnes Traverse², Maja Popovic¹, Kun Zhang³, •Klaus-Peter Lieb³, and Natasha Bibic¹ — ¹VINČA Institute of Nuclear Sciences, 11001 Belgrade, Serbia — ²Lab. Chimie Physique, Université Paris-Sud, 91405 Orsay, France — ³II. Physikalisches Institut, Universität Göttingen, 37077 Göttingen, Germany

Transition-metal nitrides are known for their excellent tribological properties, making them important materials for protective hard coatings. In addition, CrN offers interesting thermoelectric and magnetic properties, correlated with a structural and magnetic phase transition at 273-286 K. The presence of additional transition-metals such as V or Mo plays an important role on their properties. We report on modifications of 280 nm CrN layers deposited on Si wafers via reactive sputtering and irradiated at room temperature with up to 2x1017 V-ions/cm2 at 80 keV. Rutherford backscattering spectroscopy (RBS), transmission electron microscopy (XTEM, HRTEM), and X-ray diffraction (XRD) were used to characterize changes in the structural properties. Their optical and electronic features were obtained by infrared spectroscopy in reflection mode and by electrical resistivity measurements. CrN was found to keep its cubic structure under the ion implantation; the initially partially non-metallic CrN layer displays metallic character, which could be related to Cr1-xVxN formation.