Berlin 2012 –
scientific programme
DF 19: Resistive switching II (jointly with DS, KR, HL)
Friday, March 30, 2012, 11:00–12:30, H 0111
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11:00 |
DF 19.1 |
Resistive switching mechanism of Ti/HfO2/TiN RRAM cells studied by nondestructive hard x-ray photoelectron spectroscopy — •Małgorzata Sowińska, Thomas Bertaud, Damian Walczyk, Christian Walczyk, Sebastian Thiess, Wolfgang Drube, and Thomas Schroeder
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11:15 |
DF 19.2 |
Pulse-induced resistive switching of CMOS embedded HfO2-based 1T1R cells — •damian walczyk, christian walczyk, thomas bertaud, małgorzata sowińska, mindaugas lukosius, steffen kubotsch, thomas schroeder, and christian wenger
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11:30 |
DF 19.3 |
Resistive switching on HfO2-based metal-insulator-metal structures: effects of the top metal electrode and the oxygen partial pressure — •Thomas Bertaud, Damian Walczyk, Christian Walczyk, Steffen Kubotsch, Malgorzata Sowinska, Thomas Schroeder, Christophe Vallée, Vincent Jousseaume, and Christian Wenger
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11:45 |
DF 19.4 |
A model for a non-volatile memory material: First principles study of Cu diffusion in α-cristobalite and α-quartz — •Martin Zelený, Jozsef Hegedüs, Adam. S. Foster, David. A. Drabold, Stephen. R. Elliott, and Risto. M. Nieminen
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12:00 |
DF 19.5 |
Transient Processes in Response to Electronic Excitation of Phase Change Materials — •Martin Salinga and Martin Wimmer
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12:15 |
DF 19.6 |
Nonvolatile resistive switching in Au/BiFeO3 rectifying junction — •Yao Shuai, Chuangui Wu, Wanli Zhang, Shengqiang Zhou, Danilo Bürger, Stefan Slesazeck, Thomas Mikolajick, Manfred Helm, and Heidemarie Schmidt
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