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DF: Fachverband Dielektrische Festkörper
DF 9: Poster I - Biomagnetism, FePt Nanoparticles, Magnetic Particles/Clusters, Magnetic Materials, Magnetic Semiconductors, Half-metals/Oxides, Multiferroics, Topological Insulators, Spin structures/Phase transitions, Electron theory/Computational micromagnetics, Magnetic coupling phenomena/Exchange bias, Spin-dependent transport, Spin injection/spin currents, Magnetization/Demagnetization dynamics, Magnetic measurement techniques
DF 9.18: Poster
Dienstag, 27. März 2012, 12:15–15:15, Poster A
Magnetic and Electronic properties of Mn-stabilized Zirconia (MnSZ) — •Jan Zippel1, Michael Lorenz1, Anette Setzer1, Holger Hochmuth1, Pablo Esquinazi1, Nikolai Sobolev2, Alexandre Jacquot3, and Marius Grundmann1 — 1Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentlaphysik II, Linnéstrasse 5, 04103 Leipzig, Germany — 2Universidade de Aveiro, Departamento de Fisica, Campus de Santiago, 3810-193 Aveiro, Portugal — 3Fraunhofer Institut für Physikalische Messtechnik, Heidenhofstrasse 8, D-79110 Freiburg, Germany
The possibility to combine both, the electron spin as a new degree of freedom and the electron charge offers opportunities for a new generation of devices. As recently predicted [1], MnSZ is proposed as a ferromagnetic semiconductor with a Curie temperature TC above room temperature. As recently shown, a Mn related ferromagnetism has not been observed yet [2]. By applying an annealing step in oxygen defficient ambient at about Tann ≈ 700∘ C to the MnSZ thin films grown by pulsed-laser deposition (PLD), we observe a ferromagnetic behavior in superconducting quantum interference device (SQUID) measurements at about T = 60 K. In addition, electron paramagnetic resonance (EPR) suggests a change of the Mn oxidation state from an EPR silent Mn3+ to Mn2+. Seebeck-effect measurements verify a transition from p–type conductivity to n–type conductivity around 500 K. [1] S. Ostanin et al., Phys. Rev. Lett. 98, 016101 (2007). [2] J. Zippel et al., Phys. Rev. B 82, 125209 (2010).