Berlin 2012 – scientific programme

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DF: Fachverband Dielektrische Festkörper

DF 9: Poster I - Biomagnetism, FePt Nanoparticles, Magnetic Particles/Clusters, Magnetic Materials, Magnetic Semiconductors, Half-metals/Oxides, Multiferroics, Topological Insulators, Spin structures/Phase transitions, Electron theory/Computational micromagnetics, Magnetic coupling phenomena/Exchange bias, Spin-dependent transport, Spin injection/spin currents, Magnetization/Demagnetization dynamics, Magnetic measurement techniques

DF 9.25: Poster

Tuesday, March 27, 2012, 12:15–15:15, Poster A

ZnO Metal Semiconductor Field Effect Transistor with magnetic channel — •Tim Kaspar, Danilo Bürger, Ilona Skorupa, Vicki Kühn, Artur Erbe, Manfred Helm, and Heidemarie Schmidt — Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany

We focus on the development of transparent semiconductor spintronics devices. Our work is motivated by the observation of s-d exchange inducted spin polarization in magnetic ZnO:(Co, Mn) thin films below 50 K and related magnetoresistance effect [1]. Our aim is to control the conductance in ZnO Metal Semiconductor Field Effect Transistors (MESFET) with magnetic channel by external electrical AND magnetic fields. The magnetic ZnO:(Co, Mn) channel layers have been deposited by pulsed laser deposition on c-plane sapphire substrates. Gate, source, and drain contacts have been structured by optical lithography. The gate contact has been fabricated by reactive sputtering of Ag/Au [2]. Source and drain contacts have been fabricated from high conducting transparent ZnO. The characteristics of the ZnO-based MESFETs with magnetic channel in external perpendicular magnetic fields ranged from -1.8T to +1.8T are presented.

[1] Qingyu Xu, et al., Phys. Rev. Lett. 101, 076601 (2008)

[2] H.Frenzel et al., Appl. Phy. Lett. 92, 192108 (2008