Berlin 2012 – wissenschaftliches Programm

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DF: Fachverband Dielektrische Festkörper

DF 9: Poster I - Biomagnetism, FePt Nanoparticles, Magnetic Particles/Clusters, Magnetic Materials, Magnetic Semiconductors, Half-metals/Oxides, Multiferroics, Topological Insulators, Spin structures/Phase transitions, Electron theory/Computational micromagnetics, Magnetic coupling phenomena/Exchange bias, Spin-dependent transport, Spin injection/spin currents, Magnetization/Demagnetization dynamics, Magnetic measurement techniques

DF 9.27: Poster

Dienstag, 27. März 2012, 12:15–15:15, Poster A

Optical and Magneto-optical Properties of ZnO(0001) Single Crystals Implanted with Fe and Co Ions — •Scarlat Camelia¹, Zhou Shengqiang¹, Gordan Ovidiu², Fronk Michael², Zahn R. T. Dietrich², Helm Manfred¹, Schmidt Heidemarie¹, and Salvan Georgeta² — ¹Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Germany — ²Semiconductor Physics, Chemnitz University of Technology, Germany

ZnO is a transparent wide-band-gap semiconductor which has been intensively investigated in the view of (magneto-) and (opto-)electronic applications. In this work the (magneto-)optical properties of unimplanted ZnO(0001) single crystals and single crystals implanted with ⁵⁷Fe and Co ions were investigated at room temperature by means of Raman spectroscopy, spectroscopic ellipsometry, and magneto-optical Kerr effect (MOKE) spectroscopy. The ZnO (0001) single crystals were coimplanted with ⁵⁷Fe and Co ions at 623 K with same fluence respectively. After implantation the samples were annealed in a high-vacuum furnace at 1073 K for different annealing time. The Raman spectra measured in resonance with an excitation energy of 3.82 eV exhibit higher order scattering by LO phonons. The increase in the ratio between the second and the first order phonon peak intensities for long annealing time can be correlated with a reduction in the number of defects and with improved crystallinity. The implanted ZnO crystals exhibit magneto-optical activity in two broad spectral ranges centered around 3 eV and around 4.3 eV, the strength of which also varies significantly with the annealing time.