Berlin 2012 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

DF: Fachverband Dielektrische Festkörper

DF 9: Poster I - Biomagnetism, FePt Nanoparticles, Magnetic Particles/Clusters, Magnetic Materials, Magnetic Semiconductors, Half-metals/Oxides, Multiferroics, Topological Insulators, Spin structures/Phase transitions, Electron theory/Computational micromagnetics, Magnetic coupling phenomena/Exchange bias, Spin-dependent transport, Spin injection/spin currents, Magnetization/Demagnetization dynamics, Magnetic measurement techniques

DF 9.67: Poster

Tuesday, March 27, 2012, 12:15–15:15, Poster A

Spin Injection and Spin Transport in Zinc Oxide — •Matthias Althammer, Eva-Maria Karrer-Müller, Sebastian T. B. Goennenwein, Matthias Opel, and Rudolf Gross — Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, Garching

The wide bandgap semiconductor zinc oxide is interesting for semiconductor spintronics because of its small spin-orbit coupling implying a large spin coherence length. We investigate the injection, transport, and detection of spin-polarized charge carriers in ZnO utilizing all-electrical, vertical spin valve devices with ferromagnetic electrodes. Using pulsed laser deposition and electron-beam evaporation, we fabricated epitaxial multilayers of TiN/Co/ZnO/Ni/Au on (0001)-oriented Al₂O₃ substrates with different thicknesses of the ZnO spacer layer ranging from 5 nm to 100 nm. The multilayers were patterned into vertical mesa structures with junction areas between 100 µm² and 400 µm². Magnetotransport measurements show a clear spin valve behavior. The switching fields correspond to the coercive fields of the ferromagnetic layers as determined by SQUID magnetometry. For a ZnO thickness of 15 nm, the magnetoresistance (MR) increases from 0.8% at 200 K to 8.5% at 1.8 K. We analyze the maximum MR at low temperatures as a function of the ZnO thickness in the framework of a two spin channel model with a spin-dependent interface resistance and obtain a spin drift length for ZnO of 14.3 nm.

This work was supported by the Deutsche Forschungsgemeinschaft via SPP 1285 (project no. GR 1132/14).