Berlin 2012 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
DS: Fachverband Dünne Schichten
DS 20: Application of thin films
DS 20.5: Vortrag
Mittwoch, 28. März 2012, 10:30–10:45, H 0111
The Dependence of Field Effect Mobility on Layer Thickness in Ultra-Thin Film, Solution Processed, Indium Zinc Oxide TFTs — •Daniel Walker1, Marc Häming2, Alexander Issanin2, Andreas Klyszcz2, Mareiki Kaloumenos2, Christian Melzer1, Heinz von Seggern1, Rudolph Hoffmann2, Klaus Bonrad2, and Peer Kirsch2 — 1TU Darmstadt, FB Materialwissenschaften, D-64287 Darmstadt, Germany — 2Merck TU Darmstadt Laboratories, D-64287 Darmstadt, Germany
Indium-Zinc Oxide and related inorganic semiconductors are generating significant interest due to their transparency and large field effect mobilites for use in both next generation LCD backplane and flexible electronics. In our solution processed devices which have an ultra-thin active layer, between 5 and 20nm thick, we have found that films of equal thickness have dramatically different field-effect mobility and on-off ratios depending on subtle changes in the method of depositing the layer although the subsequent annealing step where the layer itself is formed remains the same. In some cases the mobilities more than double and exceed 10cm2/Vs. Furthermore we have seen that increasing the layer thickness results in an overall decrease in field effect mobility. The mechanism behind these effects is unclear and examining such thin films presents its own challenges. This talk will discuss different experimental techniques, from electronic measurements to SPM used to examine the obtained films and proposes possible mechanisms behind the enhanced transistor characteristics due to the preparation route.