Berlin 2012 – scientific programme

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DS: Fachverband Dünne Schichten

DS 22: Trends in atomic layer deposition I (Focused session – Organizer: Nielsch)

DS 22.3: Topical Talk

Wednesday, March 28, 2012, 16:00–16:30, H 0111

Role of substrate chemistry in ALD revealed by in-situ techniques — •Massimo Tallarida, Marcel Michling, Chittaranjan Das, Daniel Friedrich, Matthias Städter, and Dieter Schmeisser — Brandenburgische Technische Universität Cottbus, Konrad-Wachsmann-Allee 17, 03046 Cottbus, Germany

We show recent results of our in-situ investigations where the role of substrate chemistry in ALD is outlined. While the usual strategy to develop new properties of ALD films is to find new precursors or new procedures, the influence of substrate chemistry on the growth properties of ALD films has been often underestimated. This has principally a technical reason, as the usual characterization methods (QMS, FTIR, ellipsometry) are only weakly sensitive to the substrate, and a characterization of substrates before ALD is often not possible. Thanks to the use of in-situ characterization methods, including photoemission and X-ray absorption spectroscopy with synchrotron radiation, we are able to determine chemical properties of substrates before ALD and after either half or complete ALD cycles. The substrate chemistry influences the standard Al₂O₃ ALD with TMA and water [1,2], as well as the TiO₂ ALD with TTIP and either water, O₂ or O₂-plasma.

[1] M. Tallarida, K. Kukli, M. Michling, M. Ritala, M. Leskelä and D. Schmeisser, Chem. Mater. 23, 3159 (2011);

[2] M. Tallarida, C. Adelmann, A. Delabie, S. van Elshocht, M. Caymax, and D. Schmeisser, Appl. Phys. Lett. 92, 042906 (2011).