Berlin 2012 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 23: Trends in atomic layer deposition II (Focused session – Organizer: Nielsch)
DS 23.1: Hauptvortrag
Mittwoch, 28. März 2012, 17:30–18:00, H 0111
Functional complex oxide materials by atomic layer deposition — •Maarit Karppinen — Laboratory of Inorganic Chemistry, Department of Chemistry, Aalto University, Finland
Complex oxides of 3d transition metals play central roles in many important future applications related to e.g. spintronics and sustainable energy technologies. The apparent examples include but are not limited to the emerging spintronic devices based on manganese oxides, high-Tc superconductors based on copper oxides, next-generation thermoelectric devices based on cobalt oxides, solid-oxide fuel cells based on a tailored combination of various oxide materials, Li-ion batteries based on oxides of cobalt, manganese, iron, titanium, etc. The present lecture is a short summary of the ALD (Atomic Layer Deposition) research carried out on various complex oxide materials in our laboratory, such as hexagonal and orthorhombic forms of RMnO3 (R = rare earth element) [1,2], [Ca2CoO3]0.62[CoO2] [3], and MnCo2O4 [4]. All the fundamental elements of basic research on such thin-film materials are discussed: (i) ALD process development to obtain high-quality thin films of the desired metal composition, (ii) post-deposition treatments to obtain the desired phase in crystalline form and to control the oxygen stoichiometry, and (iii) basic chemical and physical property characterizations of the films.
[1] K. Uusi-Esko, J. Malm & M. Karppinen, Atomic layer deposition of hexagonal and orthorhombic YMnO3 thin films, Chem. Mater. 21, 5691 (2009).
[2] K. Uusi-Esko & M. Karppinen, Extensive series of hexagonal and orthorhombic RMnO3 (R = Y, La, Sm, Tb, Yb, Lu) thin films by atomic layer deposition, Chem. Mater. 23, 1835 (2011).
[3] J. Lybeck, M. Valkeapää, S. Shibasaki, I. Terasaki, H. Yamauchi & M. Karppinen, Thermoelectric properties of oxygen-tuned ALD-grown [Ca2CoO3]0.62[CoO2] thin films, Chem. Mater. 22, 5900 (2010).
[4] K. Uusi-Esko, E.-L. Rautama, M. Laitinen, T. Sajavaara & M. Karppinen, Control of oxygen nonstoichiometry and magnetic property of MnCo2O4 thin films grown by atomic layer deposition, Chem. Mater. 22, 6297 (2010).