Berlin 2012 – scientific programme

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DS: Fachverband Dünne Schichten

DS 23: Trends in atomic layer deposition II (Focused session – Organizer: Nielsch)

DS 23.3: Topical Talk

Wednesday, March 28, 2012, 18:30–19:00, H 0111

Atomic layer deposition of oxide thin films for non-volatile memory applications — •Susanne Hoffmann-Eifert — Peter-Grünberg Institut (PGI-7), Forschungszentrum Jülich and Jülich-Aachen Research Alliance (JARA-FIT), Germany

The fast growing market for portable electronic devices demands for non-volatile memory circuits with high speed data access and high reliability in combination with low power consumption. One promising concept is the resistive switching random access memory (RRAM). Films from transition metal oxides sandwiched between metal electrodes often show binary stable electric resistance states which can be switched by applying a certain voltage. Decisive for a stable device operation are a homogeneous microstructure and a controlled defect density in the oxide films of a few nm in thickness. Atomic layer deposition (ALD) can fulfill these requirements by its unique surface-reaction controlled self-limiting growth.

The talk will comprise recent results on ALD transition metal oxide thin films integrated into cross point MIM structures for future resistive switching applications. TiO2 thin films were grown from water based thermal ALD processes utilizing different alkoxide and amide based Ti sources. For ZrO2 thin films an amide type precursor was used in ozone and water based ALD processes. In addition, selected works on ALD HfO2, Nb2O5 and Ta2O5 thin films utilized in switching cells will be summarized. The examples highlight the importance of atomic layer deposition for the new non-volatile memory concept of resistive switching RAM.