Berlin 2012 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 23: Trends in atomic layer deposition II (Focused session – Organizer: Nielsch)
DS 23.5: Vortrag
Mittwoch, 28. März 2012, 19:15–19:30, H 0111
ALD of metal oxides and fluorides for optical applications — •Matti Putkonen1,2, Adriana Szeghalmi3, Mato Knez3, and Timo Sajavaara4 — 1Beneq Oy, P.O. Box 262, FI-01511 Vantaa, Finland — 2Laboratory of Inorganic Chemistry, Aalto University School of Science and Technology P.O. Box 16100, FI-00076 Aalto, Espoo, Finland — 3Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle (Saale), Germany — 4Department of Physics, P.O. Box 35 (YFL), FI-40014 University of Jyväskylä, Finland
Atomic layer deposition (ALD) is a mature technology and there is increased number of ALD enabled applications, such as optical coatings.
For high index materials there are several possibilities but for low index materials deposited by ALD the selection is still more limited. The lack of industrially viable process for low refractive index materials, such as SiO2 and metal fluorides is still the limiting factor.
In this presentation we show data concerning the SiO2 deposition by thermal and plasma ALD using novel precursors as well as deposition of metal fluorides by using chemistry based on the traditional metal oxide ALD chemistry using either fluorinated metal β-diketonates or fluorinated hydrocarbons as a fluorine source. [1] The depositions were carried out by using Beneq TFS 200 and P400 ALD tools. The films were analyzed by TOF-ERDS, RBS, XRD and AFM. Optical properties of the deposited films were also measured at UV region. In this presentation we also discuss the ALD process requirements when these processes are transferred to large surface area coatings.
1. M. Putkonen et. al. J. Mater. Chem. 21 (2011) 14461.