Berlin 2012 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
DS: Fachverband Dünne Schichten
DS 23: Trends in atomic layer deposition II (Focused session – Organizer: Nielsch)
DS 23.6: Talk
Wednesday, March 28, 2012, 19:30–19:45, H 0111
Thermoelectric Characterization of Sb2Te3 Thin Films Deposited by ALD — •Sebastian Zastrow1, Christian Schumacher1, Matthias Regus2, Stephan Schulz3, and Kornelius Nielsch1 — 1University of Hamburg — 2University of Kiel — 3University of Duisburg-Essen
Thermoelectric materials can be used as temperature sensors or peltier cooling devices as well as to recover a part of the massive losses of energy due to the waste heat generated in fossil-fuel driven power plants and vehicles. Antimony Telluride (Sb2Te3) is a p-doped semiconductor and in the focus of interest for room temperature applications because of its thermoelectric peak performance at around 350 K. However, thermoelectric properties of Sb2Te3 ALD thin films have not been reported yet. Based on the work of Pore et al., Sb2Te3 is deposited with a home-made reactor on SiO2 by using (Et3Si)2Te and SbCl3. The surface roughness as well as the growth rate depend strongly on the deposition temperature as reported by Cu et al. To check the preferential growth directions and the composition, XRD and EDX measurements are carried out. The thermoelectric properties are influenced by the deposition parameters. Therefore, spatial scans of the Seebeck coefficient are performed and the electrical resistivity is measured. In order to enhance the thermoelectric performance, a first optimization by short annealing processes is done under helium atmosphere up to 570 K.
The authors would like to thank the "Karl-Vossloh-Stiftung".