Berlin 2012 – scientific programme
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DS: Fachverband Dünne Schichten
DS 26: Thin film characterization: structure analysis and composition (Ion assisted methods and analysis)
DS 26.3: Talk
Wednesday, March 28, 2012, 15:30–15:45, H 2032
In situ X-Ray Reflectivity measurements during DC Sputtering of Vanadium Carbide thin films — •Marthe Kaufholz1, Baerbel Krause1, Sunil Kotapati1, Sven Ulrich2, Michael Stüber2, and Tilo Baumbach1 — 1ISS, Karlsruher Institute for Technology — 2IAM-AWP, Karlsruher Institute for Technology
Vanadium Carbide (VC) is a promising candidate for new hard coatings used e.g. in medical applications. For optimising the coating properties, the relation beween the microstructure formation, deposition conditions and mechanical properties has to be understood. In situ X-Ray Reflectivity (XRR) is a powerful tool to investigate the changes in thickness, electron density and roughness during deposition. In situ XRR measurements during sputtering were performed at ANKA (MPI-Beamline). Several VC films were deposited on Si with different growth conditions. Before and after deposition a full specular XRR curve was taken. During sputtering, the intensity changes e.g. due to the thickness increase were measured at fixed angular position of the detector. For the analysis of the angle - and time-dependent XRR a simulation tool is used based on the Parratt Algorithm. This tool can be adapted to other materials and deposition techniques. First measurements show that the electron density of the thin films depends strongly on the plasma properties during the deposition. This might give the possibility of a controlled growth of layers with different electron density by tuning the plasma conditions.