Berlin 2012 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 26: Thin film characterization: structure analysis and composition (Ion assisted methods and analysis)

DS 26.5: Vortrag

Mittwoch, 28. März 2012, 16:00–16:15, H 2032

Sputter Yield Amplification upon reactive sputtering of TiO₂ — •Rüdiger M. Schmidt¹, Tomas Kubart², Michael Austgen¹, Dominik Wagner¹, Thomas Nyberg², Andreas Pflug³, Sören Berg², and Matthias Wuttig¹ — ¹I. Institute of Physics, RWTH Aachen University, Germany — ²Solid State Electronics, The Ångström Laboratory, Uppsala University, Sweden — ³Fraunhofer IST, Braunschweig, Germany

Titanium Dioxide (TiO₂) is a material with attractive properties which have led to various applications such as anti-reflective coatings or self cleaning surfaces. One of the most frequently applied deposition techniques used for TiO₂ is reactive magnetron sputtering. Unfortunately TiO₂ suffers from a comparatively low deposition rate when reactively sputtered. To increase the deposition rate, Sputter Yield Amplification (SYA) can be used through recoil of the sputtering species at implanted heavy dopants below the target surface. Here we present experimental results showing a large increase of the TiO₂ deposition rate when doped with Tungsten. Although SYA has been proposed earlier, the production of doped targets was complicated. We have built a designated sputter deposition tool which enables systematic studies of SYA. In this study the rate increase by SYA is investigated for two different dopants, namely Tungsten and Bismuth. Our experiments show that the rate increase of TiO₂ by Bismuth is surprisingly low. Tungsten on the other hand results in a large rate increase of 160% in DC and 220% in HiPIMS mode. A number of additional experiments have been carried out to verify and explain this observation.