Berlin 2012 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

DS: Fachverband Dünne Schichten

DS 28: Thin film characterization: structure analysis and composition (Spectroscopy)

DS 28.3: Vortrag

Mittwoch, 28. März 2012, 18:15–18:30, H 2032

X-Ray induced characterization of ion implantation depth profiles — •Philipp Hönicke and Burkhard Beckhoff — Physikalisch-Technische Bundesanstalt (PTB), Abbestr. 2-12. 10587 Berlin, Germany

An X-ray induced characterization method using Grazing Incidence X-Ray Fluorescence (GIXRF) analysis has been applied to the characterization of various ion implantations into silicon, germanium and gallium arsenide. Multiple implanted species with nominal fluences between 1x10¹⁴ cm⁻² and 1x10¹⁶ cm⁻² and implantation energies between 0.5 keV and 150 keV have been characterized using this method. The depth profiling with GIXRF analysis is based on the in depth changes of the X-ray Standing Wave (XSW) field intensity. The XSW field arises between the primary and the reflected beam and is dependent on the incident [1]. The implantation depth profile is convolved with this intensity distribution and creates a specific fluorescence curve when a GIXRF measurement is performed. The GIXRF measurements have been carried out at the laboratory of the PTB at BESSY using monochromatized synchrotron radiation of well-known radiant power and spectral purity [2]. The results obtained with this method show good agreement with secondary ion mass spectrometry and medium energy ion scattering [1] as well as grazing exit X-ray fluorescence [3] investigations.
P. Hönicke et al., Anal. Bioanal. Chem. 396(8), 2825-2832 (2010)
B. Beckhoff et al., Anal. Chem. 79, 7873-7882 (2007)
Y. Kayser et al., Spectrochim. Acta B 65, 445-449 (2010)