Berlin 2012 – scientific programme
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DS: Fachverband Dünne Schichten
DS 28: Thin film characterization: structure analysis and composition (Spectroscopy)
DS 28.6: Talk
Wednesday, March 28, 2012, 19:00–19:15, H 2032
Factor Analysis and Advanced Inelastic Background Analysis in XPS: Unraveling time dependent contamination growth on multilayers and thin films — •Sina Gusenleitner1,2, Tina Graber2, Dirk Ehm2, and Friedrich Reinert1,3 — 1Physikalisches Institut, Experimentelle Physik VII und W. C. Röntgen Research Center for Complex Material Systems, Universität Würzburg, 97074 Würzburg — 2Carl Zeiss SMT GmbH, 73447 Oberkochen — 3Karlsruhe Institut für Technologie, Gemeinschaftslabor für Nanoanalytik, 76021 Karlsruhe
In order to follow and understand time dependent contamination growth on multilayer mirrors for extreme ultraviolet (EUV) lithography applications, particular heterosystems were investigated with various spectroscopic methods like X-ray Photoemission Spectroscopy (XPS) and Reflection Electron Energy Loss Spectroscopy (REELS). Diverse capping layers can be used to terminate EUV multilayer mirrors to protect the underlaying multilayer stack, one very promising is Ru. In XPS problems encounter when analyzing spectra as the signals of Ru and C overlap. Further, Ru is not only present as pure metal, but also in its oxidized state. Disentangling the overlapping XPS spectra is achieved by application of Factor Analysis (FA) yielding not only the spectra of each component but also the according weights. Thus a model for the time dependent contamination growth can be developed. This model was cross checked by advanced inelastic background analysis. Both methods display an eminent way to unravel overlapping datasets and deducing multilayer composition models.