Berlin 2012 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

DS: Fachverband Dünne Schichten

DS 29: High-k and low-k dielectrics (joint session with DF)

DS 29.4: Vortrag

Mittwoch, 28. März 2012, 10:30–10:50, EB 407

Epitaxial growth of Ba_0.6Sr_0.4TiO₃ on highly conductive SrMoO₃ thin films by Pulsed Laser Deposition — •Aldin Radetinac, Philipp Komissinskiy, and Lambert Alff — Institut für Materialwissenschaften, Technische Universität Darmstadt, Petersenstraße 23, 64287 Darmstadt, Germany

High-quality thin films and heterostructures of dielectric and conducting oxides are necessary for realization of all-oxide tunable capacitors. Here we present epitaxial Ba_0.6Sr_0.4TiO₃/SrMoO₃ (BST/SMO) heterostructures grown by Pulsed Laser Deposition (PLD) on single crystal SrTiO₃ (100) and GdScO₃ (110) substrates. 80 nm thick highly conducting (001) SMO films with a resistivity below 100 µΩcm are deposited in argon atmosphere at 5x10⁻⁴ Torr [1]. A 5 nm thick initial epitaxial BST buffer layer is grown at low oxygen pressure of 10⁻⁵ Torr and flow of 0.7 sccm. The buffer layer prevents oxidation of the SMO film to SrMoO₄ and allows further deposition of the fully oxidized paraelectric BST at oxygen pressure of 5x10⁻⁴ Torr and 0.9 sccm flow. To our knowledge this study shows for the first time how metastable materials like SMO can be incorporated in oxide electronic devices. The work is supported by the GRK 1037 (TICMO) project of the DFG.

[1] A. Radetinac, K. S. Takahashi, L. Alff, M. Kawasaki and Y. Tokura, Appl Phys Express 3 (7) (2010)