Berlin 2012 –
scientific programme
DS 29: High-k and low-k dielectrics (joint session with DF)
Wednesday, March 28, 2012, 09:30–11:30, EB 407
 |
09:30 |
DS 29.1 |
High dielectric constants due to charge order induced electrical heterogeneity — •Stephan Krohns, Pit Sippel, Holger Kirchhain, Stefan Riegg, Peter Lunkenheimer, Armin Reller, and Alois Loidl
|
|
|
|
09:50 |
DS 29.2 |
Bilayer gate dielectric stacks of cerium oxide and titanium oxide for nanoelectronics — •Meng Meng Vanessa Chong, Kam Chew Leong, Pooi See Lee, and Iing Yoong Alfred Tok
|
|
|
|
10:10 |
DS 29.3 |
High quality REO thin films from wet chemical deposition — •Maraike Ahlf, Meng Meng Vanessa Chong, Mathias Wickleder, Alfred Iing Yoong Tok, Pooi See Lee, and Katharina Al-Shamery
|
|
|
|
10:30 |
DS 29.4 |
Epitaxial growth of Ba0.6Sr0.4TiO3 on highly conductive SrMoO3 thin films by Pulsed Laser Deposition — •Aldin Radetinac, Philipp Komissinskiy, and Lambert Alff
|
|
|
|
10:50 |
DS 29.5 |
P-type conductivity in oxygen deficient HfO2−x thin films grown by Reactive Molecular Beam Epitaxy — •Erwin Hildebrandt, Jose Kurian, Mathis Müller, Thomas Schroeder, Hans-Joachim Kleebe, and Lambert Alff
|
|
|
|
11:10 |
DS 29.6 |
Hydrogen Impurity in Y2O3: an Ab−Initio and a µSR perspective — •Estelina L. Silva, Apostolos Marinopoulos, Rui Vilão, and Ricardo Vieira
|
|
|
