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DS: Fachverband Dünne Schichten

DS 3: Focused electron beam induced processing for the fabrication of nanostructures I (focused session, jointly with O – Organizers: Huth, Marbach)

DS 3.4: Vortrag

Montag, 26. März 2012, 16:30–16:45, H 0111

Proximity Effects in Focused Electron Beam- Induced Processing on Ultra-thin Membranes — Marie-Madeleine Walz, Florian Vollnhals, Florian Rietzler, Michael Schirmer, Hans-Peter Steinrück, and •Hubertus Marbach — Lehrstuhl für Physikalische Chemie II and Interdisciplinary Center for Molecular Materials (ICMM), Friedrich-Alexander-University, Erlangen-Nuremberg, Egerlandstr. 3, 91058 Erlangen

A fundamental challenge in lithographic and microscopic techniques employing focused electron beams are so-called proximity effects due to backscattering in the sample or forward scattering in an already formed deposit. In this work, we apply a method which allows for visualizing processes on the substrate surface triggered by an electron beam. The resulting defects are decorated by iron deposits formed by decomposition of, e.g., Fe(CO)₅ and the corresponding technique is denoted as electron beam induced surface activation (EBISA). Applying this technique for the deposition of nanostructures has the advantage that no forward scattering in an already formed deposit occurs ^[1,2]. Conventional wisdom holds that by using thin membranes proximity effects can be effectively reduced. We demonstrate that, contrary to the expectation, proximity effects on a 200 nm SiN-membrane are even larger than on the respective bulk substrate. A peculiar charging effect is suggested to play a key role in this unexpected phenomenon.
This work is supported by the DFG through grant MA 4246/1-2.
[1] Walz et al., Angew.Chem.Int.Ed.49 (2010) 4669, [2] Walz et al., PCCP, 13 (2011) 17333.