Berlin 2012 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 3: Focused electron beam induced processing for the fabrication of nanostructures I (focused session, jointly with O – Organizers: Huth, Marbach)

DS 3.5: Vortrag

Montag, 26. März 2012, 16:45–17:00, H 0111

Binary Pt-Si Nanostructures Prepared by Focused Electron-Beam-Induced Deposition — •Marcel Winhold¹, Christian Schwalb¹, Fabrizio Porrati¹, Roland Sachser¹, Achilleas S. Frangakis², Britta Kämpken³, Andreas Terfort³, Norbert Auner³, and Michael Huth¹ — ¹Physikalisches Institut, Goethe-Universität, Max-von-Laue-Str.1, 60438 Frankfurt am Main — ²Institut für Biophysik, Goethe-Universität, Max-von-Laue Str. 1, 60438 Frankfurt am Main — ³Institut für Anorganische und Analytische Chemie, Goethe-Universität, Max-von-Laue Str. 7, 60438 Frankfurt am Main

Binary systems of Pt-Si were prepared by focused electron-beam-induced deposition (FEBID) using the two precursors trimethyl(methylcyclopentadienyl)platinum(IV) (MeCpPt(Me)₃) and neopentasilane (Si(SiH₃)₄) simultaneously. By this new approach for the preparation of binary systems with FEBID, we can vary the relative flux of the two precursors during deposition. We analyzed the binary composites of platinum and silicon by means of energy dispersive X-ray spectroscopy, atomic force microscopy, electrical transport measurements, and transmission electron microscopy. The results show strong evidence for the formation of an amorphous, metastable Pt₂Si₃ phase, leading to a maximum in the conductivity for a Si:Pt ratio of 3:2.[1] Furthermore the influence of post-treatment by electron irradiation as well as annealing on samples with Si:Pt ratios of 3:2 and 1:1 will be presented.