Berlin 2012 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 37: Poster II: Focused electron beam induced processing for the fabrication of nanostructures (focused session, jointly with O); Nanoengineered thin films; Layer properties: electrical, optical, and mechanical properties; Thin film characterization: structure analysis and composition (XRD, TEM, XPS, SIMS, RBS,..); Application of thin films
DS 37.13: Poster
Donnerstag, 29. März 2012, 15:00–17:00, Poster E
Ink-jet printed conducting oxide nanoinks: processable at room temperature — •Falk von Seggern1,2, Subho Dasgupta1, Robert Kruk1, and Horst Hahn1,2,3 — 1INT, KIT, Eggenstein-Leopoldshafen, Germany — 2Joint Research Laboratory Nanomaterials, TU Darmstadt and KIT, Darmstadt, Germany — 3CFN, KIT, Karlsruhe, Germany
A printable grade of ITO-nanoink can offer solutions to a range of practical problems and issues in various important fields of interest which are generally referred under a common platform called *printable electronics*. Printing of ITO inks offer a fast and inexpensive way of producing large area transparent conducting oxide (TCO) films for various applications in this area. Additionally, the piezo-controlled drop-on-demand (DOD) ink-jet printing provides an easy and flexible method of patterning as an alternative for conventional photolithographic processes, although with considerable lower resolution.
We have produced a nanoink based on ITO nanoparticles which is stable over several weeks. This means that no significant agglomeration occurred within this period of time which is necessary to ensure a sufficiently long storage time of such dispersion-based inks. Furthermore, the ink shows nice and stable printing behavior which includes constant drop formation and no clogging of the nozzles etc. Finally, the properties of the printed film are characterized and preliminary results will be presented. We have used piranha treated polymer substrates (PEN) to facilitate the possibility of performing mechanical tests (tensile, bending etc.) in the future.