Berlin 2012 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 37: Poster II: Focused electron beam induced processing for the fabrication of nanostructures (focused session, jointly with O); Nanoengineered thin films; Layer properties: electrical, optical, and mechanical properties; Thin film characterization: structure analysis and composition (XRD, TEM, XPS, SIMS, RBS,..); Application of thin films

DS 37.16: Poster

Donnerstag, 29. März 2012, 15:00–17:00, Poster E

Epitaxial growth of Bismuth on Si(557) — •Saddam Banyoudeh, Daniel Lükermann, Christoph Tegenkamp, and Herbert Pfnür — Leibniz Universität Hannover, Institut für Festkörperphysik, Abteilung ATMOS, Appelstr. 2, 30167 Hannover

Bismuth is a semi-metal with unique electronic properties such as a large carrier mean free path, a small effective mass and high surface conductivity. Because of these attributes Bismuth thin films are an attractive system to study finite size effects and quantum transport phenomena. In our experiment we have investigated the growth of ultra-thin Bi films in the range of 10 to 40 monolayers on different wetting layer phases of Bismuth on vicinal Si(557) by spot profile analysis low energy electron diffraction (SPALEED). The orientation and structure of the films strongly depends on the initial interface. Starting with the Bi-√3-α-phase (1/3ML) we obtain 6 domains of Bi(110) with its pseudo-cubic structure rotated by 60^∘ against each other. On the initial Bi-√3-β-phase (1ML) rotationally disorderd Bi(110) was formed. But most interesting is the growth of Bi on the so called mixed phase (2/3ML). Here only two domains of Bi(110) where formed which are rotated by 13.5^∘ with respect to the step direction of Si(557). The SPALEED analysis shows that these films are stepped and contain higher index facets.