Berlin 2012 – scientific programme
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DS: Fachverband Dünne Schichten
DS 37: Poster II: Focused electron beam induced processing for the fabrication of nanostructures (focused session, jointly with O); Nanoengineered thin films; Layer properties: electrical, optical, and mechanical properties; Thin film characterization: structure analysis and composition (XRD, TEM, XPS, SIMS, RBS,..); Application of thin films
DS 37.22: Poster
Thursday, March 29, 2012, 15:00–17:00, Poster E
Characterization of the ferecrystals [(SnSe)1+x]m[MSe2]n (M= Ta, V) — •Corinna Grosse1, Saskia F. Fischer1, Ryan Atkins2, Wolfgang Neumann2, and David C. Johnson2 — 1Novel Materials, Humboldt-Universität zu Berlin, 10099 Berlin, Germany — 2Department of Chemistry, University of Oregon, Eugene OR 97401-3753, USA
Ferecrystals are layered intergrowth compounds consisting of different types of nanolayers with in-plane crystallinity and cross-plane turbostratic disorder. Layered structures of WSe2 prepared by the modulated elemental reactants (MER) method have exhibited the lowest thermal conductivity ever observed in a fully dense solid [1]. However, the structural and electronic properties of many ferecrystals are still unknown. In this study, the ferecrystals [(SnSe)1+x]m[MSe2]n (M= Ta, V) were synthesized by the MER method. Structural investigations of [(SnSe)1+x]m[TaSe2]n were made by (scanning) transmission electron microscopy. The structure of the SnSe and TaSe2 layers was resolved and compared to that of the binary compounds. Respective TEM investigations of [(SnSe)1+x]m[VSe2]n will be made. The in-plane electrical resistivity will be measured as a function of temperature and layer sequence (m and n) using the van der Pauw method. Since the complex nanostructure and small deviations in composition can critically influence the electrical properties, the structural investigations will be correlated to the results of the electrical measurements.
[1] C. Chiritescu, D. G. Cahill, N. Nguyen, D. C. Johnson et al., Science 315, 351 (2007).