Berlin 2012 – scientific programme
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DS: Fachverband Dünne Schichten
DS 37: Poster II: Focused electron beam induced processing for the fabrication of nanostructures (focused session, jointly with O); Nanoengineered thin films; Layer properties: electrical, optical, and mechanical properties; Thin film characterization: structure analysis and composition (XRD, TEM, XPS, SIMS, RBS,..); Application of thin films
DS 37.23: Poster
Thursday, March 29, 2012, 15:00–17:00, Poster E
Shallow donors in rf plasma deposited ZnO:H thin films — •Jan M. Philipps, Jan Stehr, Achim Kronenberger, Angelika Polity, Detlev M. Hofmann, and Bruno K. Meyer — I. Physikalisches Institut, JLU Giessen, Germany
The rf-sputter deposition of ZnO using H2 as a reactive gas allows modifying the carrier concentration of the films over more than six orders of magnitude. Electron concentrations from 5x1014 cm−3 up to 3x1020 cm−3 can be obtained by varying the H2/O2-ratio in the sputter gas. This makes the material attractive for applications such as TCO (transparent conducting oxides) or heatable windows. In order to investigate the properties of the incorporated donors we performed electron paramagnetic resonance experiments (EPR). In all samples the shallow donor resonance at g ∼ 1.96 could be detected with similar signal intensity. This was somewhat unexpected since high carrier concentrations above the Mott limit (∼ 5x1018 cm−3) should alter the resonance properties due to motional effects or electric shielding (skin effect). We found that high carrier concentrations have clear effect on the saturation behaviour of the EPR signals causing short relaxation times. The results will be discussed considering the polycrystalline structure of the films.