Berlin 2012 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 37: Poster II: Focused electron beam induced processing for the fabrication of nanostructures (focused session, jointly with O); Nanoengineered thin films; Layer properties: electrical, optical, and mechanical properties; Thin film characterization: structure analysis and composition (XRD, TEM, XPS, SIMS, RBS,..); Application of thin films

DS 37.28: Poster

Donnerstag, 29. März 2012, 15:00–17:00, Poster E

Preparation and characterization of Ge2Sb2Te5 phase change films on elastic substrates by pulsed laser deposition — •Hongbing Lu, Erik Thelander, Julia Benke, and Bernd Rauschenbach — Leibniz Institute of Surface Modification, 04318 Leipzig

Ge2Sb2Te5 (GST) thin films have attracted a great deal of interest as an active layer for data storage media due to its high switching rate and extremely good reversibility. Here we demonstrate the preparation of high-quality GST films on elastic polyimide substrates by pulsed laser deposition (PLD). The composition and chemical state of the films were investigated by energy dispersive x-ray spectroscopy (EDX) and x-ray photoelectron spectroscopy (XPS), respectively. The effect of annealing temperature on the crystalline nature of the films was also studied. As-deposited films were found to be amorphous. Crystalline phases with face-centered cubic and hexagonal structures appeared at 180 and 300 degrees, respectively. Importantly, no phase separation could be seen in the annealed films. Furthermore, reflectivity measurements were performed to characterize the as-deposited and annealed films, showing a high reflectivity contrast (up to 23%) between full crystalline and amorphous films. Our results indicate that PLD deposited GST film on polyimide substrate is a promising candidate for use in future flexible memory devices.