Berlin 2012 – scientific programme
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DS: Fachverband Dünne Schichten
DS 37: Poster II: Focused electron beam induced processing for the fabrication of nanostructures (focused session, jointly with O); Nanoengineered thin films; Layer properties: electrical, optical, and mechanical properties; Thin film characterization: structure analysis and composition (XRD, TEM, XPS, SIMS, RBS,..); Application of thin films
DS 37.2: Poster
Thursday, March 29, 2012, 15:00–17:00, Poster E
Fabrication of Titanium Oxide Nanostructures by Electron Beam Induced Deposition — •Michael Schirmer, Florian Vollnhals, Marie-Madeleine Walz, Thomas Lukasczyk, Hans-Peter Steinrück, and Hubertus Marbach — Lehrstuhl für Physikalische Chemie II, Universität Erlangen-Nürnberg, Germany
In electron beam induced deposition (EBID) a focused electron beam is employed to locally dissociate adsorbed precursor molecules resulting in a deposit of the nonvolatile fragments. Usually, metalloorganic compounds are used as precursors for the fabrication of metalic deposits. Herein, we explore the potential of using tetraisopropoxide (TTIP) as precursor for the fabrication of TiOx nanostructures via EBID in ultra high vacuum. We demonstrate that the initially carbon contaminated deposits can be transformed to pure TiOx nanocrystalites via certain post treatment procedures [1]. Furthermore, we expanded the EBID technique towards the fabrication of layered nanostructures by the consecutive use of Fe(CO)5 and TTIP. Thereby first, a clean iron line was deposited, which was then selectively covered with a thin capping layer fabricated from TTIP [2]. Interestingly, the ultra-thin capping layer prevents the oxidation of the iron structures, even under ambient conditions. From a more general point of view, the stepwise application of two or more precursors in EBID opens up a novel pathway for tailoring the fabrication of nanostructures.
This work is supported by the DFG through grant MA 4246/1-2.
[1] M. Schirmer et al., Nanotechnology, 22 (2011) 085301; [2]
M. Schirmer et al., Nanotechnology, 22 (2011) 475304.