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DS: Fachverband Dünne Schichten
DS 37: Poster II: Focused electron beam induced processing for the fabrication of nanostructures (focused session, jointly with O); Nanoengineered thin films; Layer properties: electrical, optical, and mechanical properties; Thin film characterization: structure analysis and composition (XRD, TEM, XPS, SIMS, RBS,..); Application of thin films
DS 37.39: Poster
Donnerstag, 29. März 2012, 15:00–17:00, Poster E
Preparation and Characterisation of LIPON thin films — •Susann Nowak, Frank Berkemeier, and Guido Schmitz — Westfälische Wilhelms-Universität Münster, Institut für Materialphysik, Wilhelm-Klemm-Str. 10, 48149 Münster
We present the preparation of LIPON (lithium phosphorous oxynitride, Li3Nx(PO4)1−x) thin films by reactive ion-beam sputtering, and the characterization of the films by temperature-dependent electrochemical impedance spectroscopy (EIS), X-ray diffraction (XRD) and transmission electron microscopy (TEM). Despite LIPON is widely discussed as a suitable electrolyte for all solid-state thin film batteries, there are only a few publications reporting on films that exhibit a thickness below 1 µm. Therefore, in this work we investigate the properties of LIPON films with a thickness between 50 and 500 nm. Ion beam sputter deposition results in amorphous LIPON layers, as observed by XRD and TEM. Temperature dependent measurements of dc-conductivity by EIS give a conductivity of 5*10−7 S/cm at 30∘C and an activation enthalpy of (58 ± 2) kJ/mol, and hence allow to operate the LIPON films in all-solid state batteries at room temperature, with a reasonable charge/discharge performance. Additionally, thin film batteries have been prepared by depositing a LIPON layer between two metallic electrodes (e.g. Pt and Ag). It is shown that during the first cycle of cyclic voltammetry measurements, electrochemically active interface regions are formed, serving as anode and cathode, respectively, and thus forming a complete electrochemical thin-film cell, which is further investigated by means of EIS and TEM.