Berlin 2012 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 37: Poster II: Focused electron beam induced processing for the fabrication of nanostructures (focused session, jointly with O); Nanoengineered thin films; Layer properties: electrical, optical, and mechanical properties; Thin film characterization: structure analysis and composition (XRD, TEM, XPS, SIMS, RBS,..); Application of thin films
DS 37.47: Poster
Donnerstag, 29. März 2012, 15:00–17:00, Poster E
Non-invasive measurement and control of the temperature of Pt nanofilms on Si supports — •Jan Philipp Meyburg1, Ievgen Nedrygailov1, Eduard Karpov2, Eckart Hasselbrink1, and Detlef Diesing1 — 1Fakultät für Chemie, Universität Duisburg-Essen, D-45117 Essen, Germany — 2Department of Civil & Materials Engineering, University of Illinois, Chicago, IL 60607, USA
A direct, non-invasive thermometry method based on the temperature dependence of the in-plane electrical resistance of Pt nanofilms deposited on commercial n-Si (111) substrates was developed in order to study the water formation reaction. At the calibration stage, the entire sample was slowly heated by external means. Experiments were carried out for hydrogen−oxygen mixtures in different molar ratios and pressures in the range of 2−30 mbar. To ignite the hydrogen−oxygen mixtures the Pt nanofilm was directly heated up to 500 ∘C by passing an electric current through it. Both, surface-catalyzed heterogeneous and homogeneous gas-phase reactions were identified. During the reaction process the resistance of the Pt nanofilm was monitored. The temperature of the Pt nanofilm was calculated using the Callendar−Van Dusen equation which describes the relationship between the temperature and the resistance of Pt thermometers. The accuracy of the present method for dynamical temperature measurement is found to be significantly better than that of a standard approach using a Pt RTD sensor. The validity of this method for Pt nanofilms on silicon is discussed.