Berlin 2012 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 38: Poster III: Resistive switching (jointly with DF, KR, HL); Thermoelectric materials (Focused session); Micro- and nanopatterning (jointly with O); Ion irradiation effects

DS 38.1: Poster

Donnerstag, 29. März 2012, 17:30–19:00, Poster E

Electrical and thermal properties of phase change line cell devices — •Martin Wimmer, Lukas Küpper, and Martin Salinga — 1. Institut of Physics, RWTH Aachen University, Germany

The characteristic electronic properties of phase change materials are the reason for their recent success in electronic data storage devices. While the current versions of phase change memory are used as a replacement of Flash memory, the potential to write information within a nanosecond offers the opportunity to replace even DRAM with this non-volatile technology.

Within this work, electrical and thermal properties of lateral phase change line cells produced by electron beam lithography are studied. This low cost cell design provides excellent scalability down to tens of nanometers. Due to the easy variability of the line cell geometry the threshold and memory switching behaviour, in particular the threshold field and the scalability of energy consumption, can be systematically investigated.