Berlin 2012 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 38: Poster III: Resistive switching (jointly with DF, KR, HL); Thermoelectric materials (Focused session); Micro- and nanopatterning (jointly with O); Ion irradiation effects

DS 38.2: Poster

Donnerstag, 29. März 2012, 17:30–19:00, Poster E

Numerical simulations of threshold switching effect in phase change memory devices — •Sascha Cramer, Martin Wimmer, and Martin Salinga — 1. Institut of Physics, RWTH Aachen University, Germany

Phase change materials are one of the most promising candidates for future universal memory technologies. In this class of materials information can be stored by using the huge contrast in electrical resistivity between the amorphous and crystalline phase. While the permanent switching is commonly understood as a structural change between those two phases, there exists another transient switching phenomenon. The latter is observed as a strong non-linearity in the current-voltage characteristic of the amorphous state: At a critical voltage a sudden drop of resistivity is observed, the so-called threshold switching. The physical understanding of this effect is still controversially discussed today. In this work numerical simulations are performed based on two different models (Ielmini*s Poole-Frenkel-model and an alternative generation-recombination-model) and compared with experimental data.