Berlin 2012 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 38: Poster III: Resistive switching (jointly with DF, KR, HL); Thermoelectric materials (Focused session); Micro- and nanopatterning (jointly with O); Ion irradiation effects

DS 38.23: Poster

Donnerstag, 29. März 2012, 17:30–19:00, Poster E

Nano structuring of XCoSb based Heusler compounds with C1_b structure as thermoelectric materials. — •Elisabeth Rausch, Michael Schwall, and Benjamin Balke — Institute of Inorganic Chemistry and Analytical Chemistry, Johannes Gutenberg - University, Mainz

This work reports on the experimental investigations of XCoSb ( X= Ti, Zr or Hf) based Heusler compounds discussed as potential p-type thermoelectic materials. A lot of n-type materials are known and exhibt high ZT values (ZT_max=1.5), but there are only a few p-type materials which can achieve ZT values above 0.5. We tried to improve the thermoelectric properties by nano structring the materials. The samples were mechanical alloyed by means of a high energy ball mill. The thermoelectric properties could be enhanced due to the nano structuring of the material. We will present structural and physical properties of the synthized coumpounds including a complete high temperature thermoelectric characterisation. The authors gratefully acknowledge the financial support by the "thermoHeusler" Project (Project No. 0327876D) of the German Federal Ministry of Economics and Technology (BMWi).