Berlin 2012 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 38: Poster III: Resistive switching (jointly with DF, KR, HL); Thermoelectric materials (Focused session); Micro- and nanopatterning (jointly with O); Ion irradiation effects

DS 38.32: Poster

Donnerstag, 29. März 2012, 17:30–19:00, Poster E

Deposition of ZnO on Micro-structured Electrodes for the Characterization as a Field Effect Transistor — •Martina Stumpp, Christopher Keil, and Derck Schlettwein — Justus-Liebig-Universität Gießen, Institut für Angewandte Physik, Heinrich-Buff-Ring 16, D-35392 Gießen

Zinc oxide (ZnO) films were electrodeposited in pulses of controlled current on micro-structured silver and gold electrodes on insulating SiO₂ on Si wafers using aqueous solutions of 0.1 M Zn(NO₃)₂. The growth of ZnO crystals on top of the metal fingers and between the fingers on the SiO₂ was analyzed. In some cases the film deposited between the fingers was conductive enough to even induce deposition on neighboring fingers which were not connected to the potentiostat. Depending on the applied current density, a different concentration profile of the precursors in solution was established leading to ZnO films with different surface morphologies. The deposited ZnO within the gaps of the microstructures formed a thin semiconducting film which subsequent to the deposition served as active layer of a field-effect transistor (FET). Electrical measurements were performed in different environments, in order to characterize the efficiency of the ZnO layer as a transistor channel.