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DS: Fachverband Dünne Schichten

DS 38: Poster III: Resistive switching (jointly with DF, KR, HL); Thermoelectric materials (Focused session); Micro- and nanopatterning (jointly with O); Ion irradiation effects

DS 38.3: Poster

Donnerstag, 29. März 2012, 17:30–19:00, Poster E

Resistance drift in amorphous phase change thin films — •Christian Dellen, Martin Wimmer, Rüdiger M. Schmidt, Martin Salinga, and Matthias Wuttig — 1. Institut of Physics, RWTH Aachen University, Germany

While phase change materials have been successfully applied in rewriteable optical data storage, they are also used for novel non-volatile electronic memory devices. The material has the ability to be switched within nanoseconds between two phases, which show large contrast in electrical resistivity. One approach to improve the information density of such a phase change memory device is to store several logic bits in one physical cell by distinguishing between different states of partial crystallization. For this so-called multilevel storage device it is important that the resistance of this device is stable over many orders of magnitude in time. While for the crystalline phase this condition is sufficiently fulfilled, the amorphous phase shows a strong time dependence of the resistance, the so-called resistance drift. In literature this effect is often ascribed to relaxation of mechanical stress or to a change of electronic defects. In this work experimental data of the resistance drift are analyzed for a variety of different phase change materials and compared to models reported in literature.