Berlin 2012 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

DS: Fachverband Dünne Schichten

DS 38: Poster III: Resistive switching (jointly with DF, KR, HL); Thermoelectric materials (Focused session); Micro- and nanopatterning (jointly with O); Ion irradiation effects

DS 38.6: Poster

Donnerstag, 29. März 2012, 17:30–19:00, Poster E

Pulse length dependence of resistive switching in Pr_0.7Ca_0.3MnO₃ noble metal sandwich structures — •Björn-Uwe Meyer, Malte Scherff, Johannes Maier, Jörg Hoffmann, and Christian Jooss — Institute of Materials Physics, University of Göttingen, Germany

Time-resolved electric transport studies are an important approach for the analysis of the underlying mechanisms of resistive switching. Pulsed voltage experiments of sputtered Pr_0.7Ca_0.3MnO₃ films sandwiched by noble metal electrodes are performed with pulse length variation between 20ns and 1s in a temperature range between 300K and 165K. Due to the interaction of the opposing metal-oxide-interfaces in an asymmetric interface geometry, switching polarity inversion is observed. The inversion and the dependence of the switching amplitude on the pulse length can be used to demonstrate an equivalence of voltage amplitude and pulse duration. Especially, the switching amplitude strongly changes at lower temperature. These results will be compared with other findings such as a variation of electrode materials, device geometry and PCMO deposition parameters. Microstructure and chemical composition before and after switching is characterized for selected samples by transmission electron microscopy.