Berlin 2012 – scientific programme

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DS: Fachverband Dünne Schichten

DS 38: Poster III: Resistive switching (jointly with DF, KR, HL); Thermoelectric materials (Focused session); Micro- and nanopatterning (jointly with O); Ion irradiation effects

DS 38.8: Poster

Thursday, March 29, 2012, 17:30–19:00, Poster E

UHV-compatible setup for alcohol-assisted chemical vapor deposition of metals — •Fedor Strigunov, Volkmar Zielasek, and Marcus Bäumer — Universität Bremen, Institut für Angewandte und Physikalische Chemie, Leobener Str. NW2, 28359 Bremen, Deutschland

Due to the importance of thin metal films in the functionality of magnetic, superconductive, optical and microelectronic devices, there is high interest in chemical vapor deposition (CVD) techniques that fit industry requirements of reliability, sustainability and ease of use. So far, however, metal CVD had often been linked to toxic precursors or low quality of the resulting film.

A recently developed hydrogen-free approach to metal-CVD uses pulsed spray evaporation delivery of simple and commercially available non-toxic metal-organic precursors in alcohols [1]. We will present the design of a CVD reactor for pulsed spray deposition of metal organic precursors and alcohols that is integrated into an UHV system for thin film analysis. Sample transfer between the chambers for thin film preparation and for analysis via XPS, STM, LEED or IR spectroscopy can proceed without breaking vacuum. The results of preliminary experiments on the deposition of Co films on various substrates will be shown. The efficiency of the Co growth process and the quality of the resulting film depend on several parameters such as concentration of the precursors, deposition pressure, carrier gas flow rate, substrate temperature, deposition duration, spray pulse frequency and pulse width.

[1] P. A. Premkumar et al., Chem. Vap. Deposition, 13 (2007) 219.