Berlin 2012 – scientific programme

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DS: Fachverband Dünne Schichten

DS 44: Poster IV: Thin film photovoltaics; Organic electronics and photovoltaics (jointly with CPP, HL, O); Organic thin films; Trends in atomic layer deposition (Focused session)

DS 44.13: Poster

Friday, March 30, 2012, 09:30–12:00, Poster E

Growth of large-size-two-dimensional pentacene crystalline for high performance organic transistors — Chuan Du, Wenchong Wang, •Liqiang Li, Harald Fuchs, and Lifeng Chi — Physikalisches Institut and Center for Nanotechnology (CeNTech) Universität Münster, 48149 Münster Germany

Organic field-effect transistors (OFETs) have been the focus of intense research in the last two decades. Several studies have been proposed to improve the field effect mobility, by optimizing the deposition of organic semiconductor films and modifying surface properties of the gate insulators. The interface between gate dielectric and organic film plays an important role in field-effect behavior because the first two to three molecular layers next to the dielectric interface dominate the charge transport. Self-assembled monolayer (SAM) has been widely used to modify the gate electric surface (SiO2).

Here we demonstrate that the use of SiO2 gate dielectric modified with a single molecular layer of PTCDI-C8 can yield a high-mobility organic semiconductor of pentacene. An average hole mobility about 1.71 cm2/VS is achieved, that is ten times higher than the mobility of devices fabricated on bare SiO2 under the same fabrication conditions (0.15 cm2/VS) and it is also higher than that of the devices with OTS treated SiO2. The differences in film morphology and grain size obtained from AFM-Images and the X-ray diffraction patterns could be used to explain the high mobility resulting from the modification of SiO2 with a single layer of PTCDI-C8.