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DS: Fachverband Dünne Schichten
DS 44: Poster IV: Thin film photovoltaics; Organic electronics and photovoltaics (jointly with CPP, HL, O); Organic thin films; Trends in atomic layer deposition (Focused session)
DS 44.21: Poster
Friday, March 30, 2012, 09:30–12:00, Poster E
IR spectroscopy on metal oxide p-doped thin films of organic semiconductors — •Sven Tengeler1,4, Tobias Glaser1,4, Sebastian Beck1,4, Bernd Lunkenheimer2,4, Daniela Donhauser3,4, and Annemarie Pucci1,4 — 1Universität Heidelberg, Kirchhoff-Institut für Physik, INF 227, 69120 Heidelberg — 2Universität Mainz, Institut für Physikalische Chemie, Jakob Welder Weg 11, 55099 Mainz — 3Technische Universität Braunschweig, Institut für Hochfrequenztechnik, Schleinitzstr. 22, 38106 Braunschweig — 4InnovationLab GmbH, Speyerer Str. 4, 69115 Heidelberg
To understand the underlying mechanisms of electrochemical doping of organic semiconductors, we investigated thin films of the organic ambipolar charge-transport materials N,N’-bis(1-naphtyl)-N,N’-diphenyl-1,1’-biphenyl-4,4’-diamine (α-NPD) and 4,4’-Bis(N-carbazolyl)-1,1’-biphenyl (CBP), each doped with the inorganic acceptor molybdenum oxide (MoO3). The doping efficiency of MoO3 was analyzed for various doping concentrations and substrate temperatures using in-situ infrared spectroscopy in a UHV setup. We introduce our experimental setup, explain the measured spectra and compare them with DFT-calculations for the neutral as well as the charged matrix molecules in order to estimate the charge-generation efficiency.
Financial support by BMBF (project MESOMERIE) is gratefully acknowledged.