Berlin 2012 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

DS: Fachverband Dünne Schichten

DS 44: Poster IV: Thin film photovoltaics; Organic electronics and photovoltaics (jointly with CPP, HL, O); Organic thin films; Trends in atomic layer deposition (Focused session)

DS 44.57: Poster

Freitag, 30. März 2012, 09:30–12:00, Poster E

Atomic Layer Deposition of Strontium Titanate using TDMAT and AbsoluteSr — •Solveig Rentrop, Theresa Moebus, Barbara Abendroth, and Dirk C. Meyer — TU Bergakademie Freiberg, Institut für Experimentelle Physik, Leipziger Straße 23, 09596 Freiberg

Atomic layer deposition (ALD) is a well-known technique used for binary systems in industry. Tenary oxides are desirable for high-k-dielectrics und resistive switching memories. Here we present preliminary studies on deposition of SrTiO3 as a model system for ternary oxides. The used precursors in the ALD system are TDMAT, AbsoluteSr and H2O. At this we have succeeded optimized TiO2 layers in a temperature range from 323K up to a maximum temperature of 593 K, whereby the purge time for a deposition at 593 K has to be a little higher. At time we are going to optimize SrO layers. Because of the TDMAT temperature limit and the fact that AbsoluteSr is only reactive from 573 K, the precursors merely overlap in this range. Febrication of SrTiO3 may be facilitated by using StarTi as a precursor since it has an ALD window with temperatures better comparable to AbsoluteSr.