Berlin 2012 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 44: Poster IV: Thin film photovoltaics; Organic electronics and photovoltaics (jointly with CPP, HL, O); Organic thin films; Trends in atomic layer deposition (Focused session)
DS 44.58: Poster
Freitag, 30. März 2012, 09:30–12:00, Poster E
Variation of the growth behavior of copper oxide deposited via ALD on thermally pretreated CNTs — •Marcel Melzer1, Thomas Waechtler1,2, Steve Mueller2, Holger Fiedler2, Sascha Hermann1,2, Raul D. Rodriguez3, Alexander Villabona3, Andrea Sendzik3, Robert Mothes4, Stefan E. Schulz1,2, Thomas Gessner1,2, Dietrisch R.T. Zahn3, Michael Hietschold3, and Heinrich Lang4 — 1Fraunhofer Institute for Electronic Nano Systems (ENAS), Technologie-Campus 3, D-09126 Chemnitz, Germany — 2Center for Microtechnologies, Chemnitz University of Technology, D-09107 Chemnitz, Germany — 3Institute of Physics, Chemnitz University of Technology, D-09107 Chemnitz, Germany — 4Institute of Chemistry, Chemnitz University of Technology, D-09107 Chemnitz, Germany
For a number of applications, carbon nanotubes (CNTs) need to be functionalized by metallic or metal oxide thin films or nanoparticles. The current work is therefore considered with the thermal atomic layer deposition (ALD) of CuxO from the liquid Cu(I) β-diketonate [(nBu3P)2Cu(acac)] and wet oxygen at 135∘C on carbon nanotubes. Since high quality CNT surfaces are chemically inert, a pretreatment is required. For this reason the influence of different thermal oxidations onto the subsequent CuxO ALD was investigated. Depending on the oxidation either the growth of particles or a rather layer like growth was observed. The Cu/C ratio measured via EDX reaches its maximal values for a pretreatment with oxygen. This suggests that the used precursor couples to oxygen surface groups.