Parts | Days | Selection | Search | Updates | Downloads | Help
DS: Fachverband Dünne Schichten
DS 44: Poster IV: Thin film photovoltaics; Organic electronics and photovoltaics (jointly with CPP, HL, O); Organic thin films; Trends in atomic layer deposition (Focused session)
DS 44.5: Poster
Friday, March 30, 2012, 09:30–12:00, Poster E
Physical vapor deposition of CdTe thin films at low temperature for solar cell applications — •Christoph Heisler, Michael Brückner, Felix Lind, Christian Kraft, Udo Reislöhner, Carsten Ronning, and Werner Wesch — Institute of Solid State Physics, University of Jena, Max-Wien-Platz 1, D-07743 Jena
Cadmium telluride is successfully utilized as an absorber material for thin film solar cells. Industrial production makes use of high substrate temperatures for the deposition of CdTe absorber layers. However, in order to exploit flexible substrates and to simplify the manufacturing process, lower deposition temperatures are beneficial. Based on the phase diagram of CdTe, predictions on the stoichiometry of CdTe thin films grown at low substrate temperatures are made in this work. These predictions were verified experimentally using additional sources of Cd and Te during the deposition of the CdTe thin films at different substrate temperatures. The deposited layers were analyzed with energy-dispersive X-ray spectroscopy. In case of CdTe layers which were deposited at substrate temperatures lower than 200 °C without usage of additional sources we found a non-stoichiometric growth of the CdTe layers. The application of the additional sources leads to a stoichiometric growth for substrate temperatures down to 100 °C which is a significant reduction of the substrate temperature during deposition.